Infineon IPB65R660CFDA 650V CoolMOS™ CFD7 Power Transistor: Performance and Application Analysis

The Infineon IPB65R660CFDA represents a significant advancement in high-voltage power MOSFET technology, leveraging the innovative CoolMOS™ CFD7 platform. Designed for demanding applications, this 650V superjunction MOSFET combines ultra-low switching losses with robust performance, making it a top choice for modern power electronics systems.

A key highlight of the IPB65R660CFDA is its exceptionally low figure-of-merit (RDS(on) × Qg), which directly translates to reduced conduction and switching losses. With an RDS(on) of just 66 mΩ at maximum gate voltage, it ensures minimal energy dissipation during operation. This is particularly beneficial in high-frequency circuits, where efficiency is critical. The incorporation of fast body diode technology further enhances its suitability for hard-switching and resonant topologies, reducing reverse recovery losses and improving system reliability.

The transistor’s performance is optimized for applications such as server and telecom power supplies, industrial SMPS, photovoltaic inverters, and EV charging systems. Its ability to operate at high frequencies allows for more compact magnetic components, reducing overall system size and cost. The CFD7 technology also features improved dv/dt robustness and greater noise immunity, ensuring stable operation in noisy environments.

Thermal management is another area where the IPB65R660CFDA excels. The advanced package design offers low thermal resistance, enabling efficient heat dissipation and higher power density. This makes it ideal for space-constrained designs that require both high efficiency and effective cooling.

In practical terms, the device supports the trend toward higher efficiency standards like 80 Plus Titanium, helping designers meet rigorous energy regulations without compromising performance.

ICGOOODFIND:

The Infineon IPB65R660CFDA sets a new benchmark in high-efficiency power conversion, offering superior switching performance, thermal management, and reliability for next-generation power systems.

Keywords:

CoolMOS™ CFD7, High Efficiency, Low Switching Losses, Power Supply Design, High Voltage MOSFET