Infineon IPB200N15N3G: A High-Performance 150V OptiMOS 5 Power MOSFET

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this innovation is Infineon Technologies with its OptiMOS™ 5 family, a benchmark for high-performance power MOSFETs. The IPB200N15N3G, a 150V N-channel MOSFET housed in a TO-263 (D2PAK) package, stands as a prime example of this advanced engineering, offering designers a superior component for a wide range of demanding applications.

Engineered with Infineon's state-of-the-art trench technology, the IPB200N15N3G achieves an exceptional balance between low switching losses and low on-state resistance (R DS(on)).

A key highlight is its maximum R DS(on) of just 3.5 mΩ at 10 V. This remarkably low resistance directly translates to minimized conduction losses, leading to higher efficiency and reduced heat generation. This allows systems to either handle higher currents within the same thermal budget or operate cooler at standard loads, thereby improving long-term reliability.

Complementing its low conduction losses are its outstanding switching characteristics. The OptiMOS 5 technology ensures ultra-low gate charge (Q G) and low figures of merit (FOMs like R DS(on) Q G). This results in faster switching speeds, which are critical for high-frequency operation in modern switch-mode power supplies (SMPS), leading to a reduction in the size of passive components like magnetics and capacitors. The combination of low R DS(on) and fast switching makes this device a perfect fit for applications where every percentage point of efficiency is crucial.

The 150V voltage rating of the IPB200N15N3G positions it ideally for use in a diverse set of applications. It is particularly well-suited for:

Primary-side switching in server and telecom SMPS.

DC-DC conversion and motor control in industrial environments.

Solar inverters and energy storage systems.

Battery management systems (BMS) and charging infrastructure for electric vehicles.

The robust TO-263 package offers a high current capability of up to 200A, providing excellent thermal performance and mechanical durability. Furthermore, the device is characterized by its high body diode robustness, ensuring reliable operation during hard commutation events.

ICGOO In summary, the Infineon IPB200N15N3G exemplifies the performance advantages of the OptiMOS 5 platform. Its industry-leading combination of extremely low on-state resistance, minimized switching losses, and a rugged package makes it an outstanding choice for power designers aiming to push the boundaries of efficiency and power density in their next-generation 150V designs.

Keywords:

OptiMOS 5

Low R DS(on)

High Efficiency

150V MOSFET

Power Density