Infineon IPL60R095CFD7 CoolMOS™ CFD7 Power Transistor: Advanced 600V Superjunction MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's CoolMOS™ CFD7 series, with the IPL60R095CFD7 standing out as a premier 600V superjunction (SJ) MOSFET engineered to set new benchmarks in performance. This device is specifically tailored for demanding applications, offering an exceptional blend of ultra-low effective dynamic losses and robust switching characteristics.

A key innovation of the CFD7 generation is the integration of a fast body diode, a critical feature that makes this MOSFET ideal for topologies requiring hard commutation. This is particularly valuable in power factor correction (PFC) circuits, server and telecom SMPS, and industrial motor drives, where reverse recovery behavior directly impacts overall system efficiency and electromagnetic interference (EMI). The fast body diode significantly reduces reverse recovery charge (Qrr), leading to cleaner switching and lower stress on the switch itself.

Furthermore, the IPL60R095CFD7 boasts an impressively low typical on-state resistance (R DS(on)) of just 95 mΩ at maximum gate voltage. This low conduction loss is a direct contributor to higher efficiency, as it minimizes the power dissipated as heat during operation. Combined with its superior switching performance, it allows designers to push switching frequencies higher without a punitive efficiency penalty. This capability is crucial for reducing the size and weight of magnetic components, thereby increasing overall power density.

The device also incorporates advanced packaging and technology features that enhance its reliability. The ThinTOLL® package offers an excellent power-to-volume ratio and low parasitic inductance, which is vital for managing high-speed switching transitions. Moreover, the MOSFET exhibits a high dv/dt ruggedness and is qualified for 175°C operating junction temperature, ensuring long-term reliability even under strenuous conditions.

ICGOOODFIND: The Infineon IPL60R095CFD7 CoolMOS™ CFD7 represents a significant leap in high-voltage MOSFET technology, delivering a optimal balance of ultra-low switching and conduction losses, integrated fast diode functionality, and superior ruggedness for the most challenging high-efficiency power conversion designs.

Keywords: CoolMOS™ CFD7, Superjunction MOSFET, Fast Body Diode, High-Efficiency, Power Density.