Infineon BSZ146N10LS5: A 100V OptiMOS Power MOSFET for High-Efficiency Switching Applications
In the realm of power electronics, the pursuit of higher efficiency, greater power density, and improved thermal performance is relentless. At the heart of this evolution are advanced power MOSFETs, which serve as critical switches in a vast array of applications. The Infineon BSZ146N10LS5 stands out as a prime example, a 100V N-channel MOSFET engineered to set new benchmarks in high-efficiency switching performance.
This device is part of Infineon's renowned OptiMOS™ 5 family, a technology platform celebrated for its exceptional balance of low figure-of-merit (RDS(on) QG) and robust switching characteristics. The BSZ146N10LS5 is specifically designed to minimize both conduction and switching losses, a combination that is paramount for modern high-frequency switch-mode power supplies (SMPS), DC-DC converters, and motor control systems.
Key features that define its performance include:
Ultra-Low On-Resistance: With a maximum RDS(on) of just 1.6 mΩ at 10 V gate-source voltage, this MOSFET drastically reduces conduction losses. This allows for higher current handling capability and improved thermal management, as less energy is wasted as heat during the 'on' state.
Superior Switching Performance: The OptiMOS™ 5 technology ensures an exceptionally low gate charge (QG) and low internal capacitances. This enables faster switching transitions, which is crucial for operating at higher frequencies. Faster switching reduces switching losses and allows for the use of smaller passive components like inductors and capacitors, leading to more compact and cost-effective designs.
High Voltage Rating: The 100V drain-source voltage (VDS) rating provides a comfortable safety margin in 48V input telecom and server power systems, industrial power tools, and battery management systems, ensuring reliable operation under voltage spikes and transient conditions.
Enhanced Body Diode: The device features a fast and rugged body diode, which is essential for efficiency in synchronous rectification and inductive load switching, such as in motor drive circuits.
The combination of these attributes makes the BSZ146N10LS5 an ideal choice for designers aiming to push the limits of efficiency. Its performance is particularly valuable in applications like:
Synchronous Rectification in AC-DC and DC-DC power supplies.
Primary Side Switching in high-performance SMPS.
Motor Drive and Control circuits for industrial and consumer appliances.
Class D Audio Amplifiers requiring high power and fidelity.
OR-ing FET and Hot-Swap applications in server and data center infrastructure.
Packaged in the space-saving SuperSO8 (LFPAK) package, the BSZ146N10LS5 also offers excellent thermal resistance, enabling efficient heat dissipation from a very small footprint. This contributes significantly to achieving higher power density in end products.
ICGOODFIND: The Infineon BSZ146N10LS5 exemplifies the innovation in power semiconductor technology, delivering a potent combination of ultra-low RDS(on), superior switching speed, and high robustness. It is a cornerstone component for engineers designing next-generation power systems where maximizing efficiency and power density is non-negotiable.
Keywords:
1. High-Efficiency Switching
2. Ultra-Low RDS(on)
3. OptiMOS™ 5 Technology
4. Power Density
5. Thermal Performance
