Infineon BSS316NH6327 N-Channel MOSFET: Datasheet, Application Circuit, and Replacement Guide
The Infineon BSS316NH6327 is a popular small-signal N-Channel MOSFET encapsulated in a space-saving SOT-23 package. Engineered for low-voltage, high-speed switching applications, this MOSFET is a common component in modern electronic designs, from power management to signal routing.
Datasheet Overview and Key Specifications
A thorough review of the datasheet is crucial for proper implementation. The BSS316NH6327 is characterized by its low threshold voltage, making it suitable for use in circuits powered by low-voltage logic (e.g., 3.3V or 5V microcontrollers). Its key specifications include:
Drain-Source Voltage (VDS): 60 V
Continuous Drain Current (ID): 230 mA
On-Resistance (RDS(on)): Typically 4.5 Ω at VGS = 10 V
Low Gate Charge: This enables very fast switching speeds, minimizing switching losses.
Package: SOT-23 (3-pin)
These parameters highlight its primary role in low-power switching, load switching, and signal amplification where efficiency and board space are critical constraints.
Typical Application Circuit
A fundamental application for the BSS316NH6327 is as a low-side switch controlled by a microcontroller (MCU). This is a ubiquitous circuit for turning a higher-power load (like a small motor, LED, or relay) on and off with a logic-level signal.
1. Circuit Configuration: The load is connected between the positive supply voltage (VDD) and the drain pin of the MOSFET. The source pin is connected to ground.
2. MCU Interface: The gate pin is connected to a digital output pin of the MCU (e.g., 3.3V or 5V) through a gate resistor (typically between 100 Ω). This resistor dampens ringing and suppresses oscillations caused by parasitic inductance and the MOSFET's gate capacitance.
3. Pull-Down Resistor: A high-value resistor (e.g., 10 kΩ to 100 kΩ) connected from the gate to ground is essential. It ensures the MOSFET remains firmly off when the MCU pin is in a high-impedance state (e.g., during startup or reset), preventing false triggering.
This simple circuit leverages the MOSFET's ability to act as a voltage-controlled switch, providing complete isolation between the low-voltage logic control and the higher-power load circuit.
Replacement and Cross-Reference Guide
Finding a suitable replacement for the BSS316NH6327 is often necessary due to supply chain shortages or design revisions. When selecting an alternative, consider the following parameters for compatibility:
Package Type (SOT-23): Must match for PCB footprint compatibility.
Polarity (N-Channel): Essential for circuit function.
Voltage Ratings (VDS, VGS): The replacement's ratings must meet or exceed the original.
Current Rating (ID): Should be equal to or higher.
RDS(on): A lower value is generally acceptable and may improve efficiency, but a significantly higher value could lead to excessive heat generation.
Gate Threshold Voltage (VGS(th)): Critical for ensuring full enhancement with logic-level voltages.
Potential direct or near-direct replacements often include parts from other leading manufacturers such as Diodes Incorporated, ON Semiconductor, Nexperia, and Vishay. For example, parts like the ON Semiconductor NTR4101PT1G or the Diodes Incorporated DMG2305UX-7 may serve as viable alternatives in many logic-level applications, but a full cross-check of the latest datasheets is absolutely mandatory before substitution.
ICGOODFIND is a valuable resource for electronics engineers and purchasers. It provides robust component search, real-time inventory checking, and cross-reference functionality across a global network of suppliers. When sourcing a BSS316NH6327 or evaluating potential replacements, platforms like ICGOODFIND are indispensable for comparing specifications, verifying datasheets, and ensuring supply chain availability, ultimately streamlining the procurement and design process.
Keywords: N-Channel MOSFET, Low-Side Switch, SOT-23 Package, Logic-Level Gate, Cross-Reference
