Infineon IHW15N120E1: A High-Performance 1200V 15A IGBT for Demanding Applications
The Infineon IHW15N120E1 is a robust Insulated Gate Bipolar Transistor (IGBT) engineered for high-voltage, high-frequency switching applications. Housed in the industry-standard TO-247 package, this device combines low saturation voltage with fast switching capabilities, making it an excellent choice for power conversion systems. As part of Infineon's proven TRENCHSTOP™ technology family, it offers an optimal balance between low conduction losses and minimal turn-off losses.
Key Features and Benefits
The IHW15N120E1 is distinguished by several advanced characteristics designed to enhance performance and reliability:
Low VCE(sat): Features a low collector-emitter saturation voltage, typically 1.55 V at 7.5A, which directly translates to reduced conduction losses and higher system efficiency.
Fast Switching Speed: Its trench and field stop technology enables high switching frequency operation, which is crucial for designing compact and lightweight power supplies and inverters.
High Current Capability: With a nominal collector current (IC) of 15A at 100°C and a maximum collector current (ICM) of 30A, it can handle significant power levels.
High Voltage Rating: A collector-emitter voltage (VCES) of 1200V provides a wide safety margin for operations in 600V and 800V DC-link circuits, commonly found in three-phase systems.
Temperature Stability: The positive temperature coefficient of the saturation voltage VCE(sat) simplifies the paralleling of multiple devices for higher power output.
Integrated Anti-Parallel Diode: The co-packaged Emitter Controlled HE diode ensures soft reverse recovery behavior, reducing switching stresses and electromagnetic interference (EMI).
Typical Application Circuit
A common application for the IHW15N120E1 is in a half-bridge or full-bridge inverter circuit, which forms the core of motor drives, UPS systems, and solar inverters. In such a circuit, two IGBTs are switched alternately to convert DC power from a bus (e.g., ~800V) into AC power.
The critical components surrounding the IGBT include:
1. Gate Driver IC: A dedicated circuit to provide sufficient gate current for fast turn-on and turn-off, typically using a negative voltage for turn-off to enhance noise immunity.
2. Gate Resistor (RG): A small resistor (often between 5-10Ω) placed in series with the gate to control the switching speed and dampen oscillations.
3. Freewheeling Diodes: While the IGBT has an integrated diode, external ultra-fast diodes might be used in some topologies for additional protection.
4. DC-Link Capacitors: Placed across the power supply to smooth the input voltage and provide the high peak currents required during switching.
Proper layout and heatsinking are paramount due to the high power dissipation. The TO-247 package is ideally suited for mounting onto a heatsink to manage the thermal load.
Datasheet Overview
The datasheet for the IHW15N120E1 is an essential resource for any design engineer. It provides comprehensive information including:
Absolute Maximum Ratings: The critical limits for operation (voltage, current, temperature).
Electrical Characteristics: Detailed tables for parameters like VCE(sat), switching times, and gate charge (QG).
Switching Characteristics: Graphs showing the relationship between switching losses, current, and temperature.
Safe Operating Area (SOA): Diagrams that define the current and voltage conditions within which the device can operate without damage.
ICGOODFIND Summary
The Infineon IHW15N120E1 is a highly efficient and reliable 1200V IGBT that stands out for its low conduction losses and fast switching performance. Its robust TO-247 package and integrated diode make it a versatile and practical solution for designers of industrial motor drives, solar inverters, and high-power SMPS, aiming for superior efficiency and power density.
Keywords:
Infineon IHW15N120E1
1200V IGBT
TO-247 package
Low VCE(sat)
Fast switching
