Infineon BSS306NH6327XTSA1 N-Channel MOSFET: Datasheet, Application Circuit, and Replacement Parts
The Infineon BSS306NH6327XTSA1 is a popular N-Channel MOSFET engineered using Infineon's advanced OptiMOS™ power transistor technology. This surface-mount device (SMD) is designed in a compact SC-63 (SOT-223) package, offering an excellent balance of low on-state resistance and high current handling capability in a minimal footprint. It is a key component in a wide array of power management and switching applications, prized for its efficiency and reliability.
Key Datasheet Specifications and Features
A thorough review of the datasheet reveals the core electrical characteristics that define this component's performance:
Drain-Source Voltage (VDS): 30 V. This makes it suitable for low-voltage applications, such as those found in consumer electronics and DC-DC converters.
Continuous Drain Current (ID): 7.5 A at a case temperature of 25°C. This robust current rating allows it to drive significant loads.
On-Resistance (RDS(on)): A remarkably low 9.5 mΩ (max) at VGS = 10 V. This is a critical parameter, as low RDS(on) minimizes conduction losses, leading to higher efficiency and reduced heat generation.
Gate Threshold Voltage (VGS(th)): Typically 1.65 V, classifying it as a logic-level MOSFET that can be easily driven by microcontrollers (3.3V or 5V logic).
Package: The SC-63 (SOT-223) package provides a good thermal performance compared to smaller SMD packages like SOT-23, allowing for better power dissipation.
Typical Application Circuit
A primary application for the BSS306NH6327XTSA1 is as a low-side switch. In this configuration, the load is connected between the drain terminal and the positive supply rail (VDD), while the source is connected directly to ground.
A typical circuit includes:
1. The MOSFET: The BSS306NH6327XTSA1 is the switching element.
2. Microcontroller (MCU): Provides the gate control signal (e.g., 3.3V or 5V PWM).
3. Gate Resistor (R_G): A small resistor (e.g., 10-100Ω) in series with the gate is used to dampen ringing and suppress oscillations caused by parasitic inductance and the MOSFET's gate capacitance.
4. Pull-Down Resistor (R_GS): A higher-value resistor (e.g., 10-100kΩ) from the gate to ground ensures the MOSFET remains off if the MCU pin is in a high-impedance state.
5. Freewheeling Diode (or use of body diode): When driving an inductive load like a motor or relay, a flyback diode is placed across the load to protect the MOSFET from voltage spikes generated when the current is suddenly switched off.
This circuit is fundamental for motor control, PWM dimming for LEDs, and relay driving.
Replacement Parts and Alternatives
While the BSS306NH6327XTSA1 is a high-performance part, design flexibility or supply chain issues may necessitate finding an alternative. Key parameters to match are VDS, ID, RDS(on), package, and gate threshold voltage. Suitable replacement parts include:
Infineon BSS308NH6327: A very close sibling with near-identical specifications.
Diodes Incorporated DMN3010LSS-13: A competitive alternative in a similar package.
ON Semiconductor NVTFS5C604NLTAG: Offers comparable performance in the same SC-63 package.
Vishay SiS414DN: Another strong candidate for power switching applications.
STMicroelectronics STL85N3LLH6: A logic-level MOSFET with similar characteristics.
When selecting a replacement, it is crucial to consult the latest datasheets to verify pinout compatibility and all electrical characteristics for your specific application conditions.
ICGOODFIND Summary
The Infineon BSS306NH6327XTSA1 stands out as an extremely efficient N-Channel MOSFET due to its exceptionally low on-resistance and logic-level compatibility. Its robust performance in a compact SOT-223 package makes it an ideal choice for designers seeking to minimize power losses and improve thermal management in space-constrained, high-current switching applications like power supplies, motor drives, and battery management systems.
Keywords: OptiMOS™, Low RDS(on), Logic-Level MOSFET, SOT-223, Power Switching.
